【二极管 - 整流器 - 单_1N4004】封装/厂家_1N4004中文资料_价格

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型号： 1N4004
制造商： Central Semiconductor
库位|库存： xxxx|xxxx
要求：无整包装整卷装连续切割带批次不详

数量阶梯	香港交货	国内含税
+xxxx	$xxxx	￥xxxx

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1N4004产品简介：

ICGOO电子元器件商城为您提供1N4004由Central Semiconductor设计生产，在icgoo商城现货销售，并且可以通过原厂、代理商等渠道进行代购。 1N4004价格参考。Central Semiconductor1N4004封装/规格：二极管 - 整流器 - 单，标准通孔二极管 400V 1A DO-41。您可以下载1N4004参考资料、Datasheet数据手册功能说明书，资料中有1N4004 详细功能的应用电路图电压和使用方法及教程。

产品参数图文手册常见问题

参数	数值
品牌	Central Semiconductor
产品目录	半导体
描述	整流器 Vr/50v Io/1A T/R
产品分类	分离式半导体
产品手册	点击此处下载产品Datasheet
产品图片
rohs	符合RoHS
产品系列	二极管与整流器,整流器,Central Semiconductor 1N4004
产品型号	1N4004
产品	Standard Recovery Rectifiers
产品种类	整流器
反向电压	400 V
反向电流IR	5 uA
商标	Central Semiconductor
安装风格	Through Hole
封装	Reel
封装/箱体	DO-41
工厂包装数量	5000
恢复时间	30 ns
最大工作温度	+ 175 C
最大浪涌电流	50 A
最小工作温度	- 65 C
正向电压下降	1.1 V
正向连续电流	1 A
系列	1N4004
配置	Single

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PDF Datasheet 数据手册内容提取

1N4001 THRU 1N4007 Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere GENERAL PURPOSE SILICON RECTIFIER Features DO-41  The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 1.0 (25.4)  Idea for printed circuit board MIN.  Open Junction chip  Low reverse leakage 0.107 (2.7) 0.080 (2.3)  High forward surge current capability DIA.  High temperature soldering guaranteed 0.205(5.2) 250℃/10 seconds at terminals 0.166(4.2) Mechanical Data 1.0 (25.4) Case : JEDEC DO-41 Molded plastic body MIN. Terminals : Solder plated, solderable per MIL-STD-750,Method 2026 0.025 (0.65) Polarity : Polarity symbol marking on body 0.021 (0.55) DIA. Mounting Position : Any Weight : 0.012 ounce, 0.33 grams Dimensions in inches and (millimeters) Maximum Ratings And Electrical Characteristics Ratings at 25°C ambient temperature unlss otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 Parameter SYMBOLS UNITS MDD MDD MDD MDD MDD MDD MDD MarkingCode 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 Maximum repetitive peak reverse voltage VRMM 50 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Maximum average forward rectified current I(AV) 1.0 A at TL=110℃ Peak forward surge current 8.3ms single half sine-wave IFSM 30 A superimposed onrated load (JEDEC Method) Maximum instantaneous forward voltage at 1.0A VF 1.10 V MaximumDCreversecurrent TA=25℃ 5.0 atratedDCblockingvoltage TA=100℃ IR 50.0 μA Typical junction capacitance (NOTE 1) CJ 15.0 pF Typical thermal resistance (NOTE 2) RθJA 50.0 ℃/W Operating junction and storage temperature range TJ,TSTG -55to+150 ℃ Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 2.Thermal resistance from junction to ambient at 0.375 (9.5m”m)lead length,P.C.B. mounted DN:T20526A0 http://www.microdiode.com Rev:2020A0 Page :1

1N4001 THRU 1N4007 Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere Ratings And Characteristic Curves T, N E FIG. 1- FORWARD CURRENT DERATING CURVE FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD R T, SURGE CURRENT R N U 1.0 E 30 C R D UR TIFIE 0.8 GE C 25 WARD RECAMPERES 00..64 SHianlgf lWe aPvhea s6e0Hz WARD SURAMPERES 2105 OR Rinedsuicsttiivvee Loorad OR GE F 0.2 K F 10 8.3ms SINGLE HALF SINE-WAVE A A (JEDEC Method) R E E 0 P V 0 25 50 75 100 125 150 175 5.0 A 1 10 100 AMBIENT TEMPERATURE, C NUMBER OF CYCLES AT 60 Hz FIG. 3-TYPICAL INSTANTANEOUS FORWARD FIG. 4-TYPICAL REVERSE CHARACTERISTICS CHARACTERISTICS T, D 20 EN 1,000 R R A 10 R ORWERES E CU 100 TJ=150 C S FMP RSES UA 1 ER NEOENT, REVMPE 10 STANTACURR 0.1 TP1%JU=LD2S5UE TC YW CIDYTCHL=E300 ms NEOUS MICROA 1 TJ=100 C N A I T N 0.1 0.01 A 0.6 0.8 1.0 1.2 1.4 1.5 T TJ=25 C S N I 0.01 0 20 40 60 80 100 INSTANTANEOUS FORWARD VOLTAGE, VOLTS PERCENT OF PEAK REVERSE VOLTAGE,% E, FIG. 5-TYPICAL JUNCTION CAPACITANCE C FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE N 200 A 100 F D E, p 100 TJ=25 C PE C M CITAN RMAL IW 10 PA HEC/ N CA 10 NT T 1 O E TI SI C N N A U R J T 0.1 0.01 0.1 1 10 100 1 0.1 1.0 10 100 REVERSE VOLTAGE,VOLTS t,PULSE DURATION,sec. The curve above is for reference only. http://www.microdiode.com Rev:2020A0 Page :2