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1 N 3 5 9 5 1N3595 DO-35 Color Band Denotes Cathode Small Signal Diode Absolute Maximum Ratings* T = 25°C unless otherwise noted A Symbol Parameter Value Units V Maximum Repetitive Reverse Voltage 150 V RRM I Average Rectified Forward Current 200 mA F(AV) I Non-repetitive Peak Forward Surge Current FSM Pulse Width = 1.0 second 1.0 A Pulse Width = 1.0 microsecond 4.0 A T Storage Temperature Range -65 to +200 °C stg T Operating Junction Temperature 175 °C J * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol Parameter Value Units P Power Dissipation 500 mW D R Thermal Resistance, Junction to Ambient 300 °C/W θJA Electrical Characteristics T = 25°C unless otherwise noted A Symbol Parameter Test Conditions Min Max Units V Breakdown Voltage I = 100 µA 150 V R R V Forward Voltage I = 1.0 mA 0.52 0.68 V F F I = 5.0 mA 0.60 0.75 V F I = 10 mA 0.65 0.80 V F I = 50 mA 0.75 0.88 V F I = 100 mA 0.79 0.92 V F I = 200 mA 0.83 1.00 V F I Reverse Current V = 125 V 1 nA R R V = 30 V, T = 125°C 0.3 µA R A V = 125 V, T = 125°C 0.5 µA R A V = 125 V, T = 150°C 3 µA R A C Total Capacitance V = 0, f = 1.0 MHz 8 pF T R t Reverse Recovery Time I = 10 mA, V = 3.5 V, 3 µs rr F R R = 1.0 kΩ L 2002 Fairchild Semiconductor Corporation 1N3595, Rev. A

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