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1N1199AR产品简介:
ICGOO电子元器件商城为您提供1N1199AR由GeneSiC Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 提供1N1199AR价格参考以及GeneSiC Semiconductor1N1199AR封装/规格参数等产品信息。 你可以下载1N1199AR参考资料、Datasheet数据手册功能说明书, 资料中有1N1199AR详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | DIODE GEN PURPOSE 50V 12A DO4整流器 50V 12A REV Leads Std. Recovery |
产品分类 | 单二极管/整流器分离式半导体 |
品牌 | GeneSiC Semiconductor |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 二极管与整流器,整流器,GeneSiC Semiconductor 1N1199AR- |
数据手册 | |
产品型号 | 1N1199AR |
不同If时的电压-正向(Vf) | 1.1V @ 12A |
不同 Vr、F时的电容 | - |
不同 Vr时的电流-反向漏电流 | 10µA @ 50V |
二极管类型 | 标准型, 反极性 |
产品 | Standard Recovery Rectifiers |
产品种类 | 整流器 |
供应商器件封装 | DO-4 |
其它名称 | 1242-1028 |
包装 | 散装 |
反向恢复时间(trr) | - |
反向电压 | 50 V |
反向电流IR | 10 uA |
商标 | GeneSiC Semiconductor |
安装类型 | 底座,接线柱安装 |
安装风格 | Through Hole |
封装 | Bulk |
封装/外壳 | DO-203AA,DO-4,接线柱 |
封装/箱体 | DO-4 |
工作温度-结 | -65°C ~ 200°C |
工厂包装数量 | 5 |
最大浪涌电流 | 240 A |
标准包装 | 5 |
正向电压下降 | 1.1 V |
正向连续电流 | 12 A |
热阻 | 2°C/W Jc |
电压-DC反向(Vr)(最大值) | 50V |
电流-平均整流(Io) | 12A |
系列 | 1N1199 |
速度 | 标准恢复 >500ns,> 200mA(Io) |
1N1199A thru 1N1206AR Silicon Standard V = 50 V - 600 V RRM Recovery Diode I = 12 A F Features • High Surge Capability DO-4 Package • Types from 50 V to 600 V V RRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. Maximum ratings, at T = 25 °C, unless otherwise specified j Parameter Symbol Conditions 1N1199A(R) 1N1200A(R) 1N1202A(R) 1N1204A(R) 1N1206A(R) Unit Repetitive peak reverse VV 5500 110000 220000 440000 660000 VV voltage RRM RMS reverse voltage V 35 70 140 280 420 V RMS DC blocking voltage V 50 100 200 400 600 V DC Continuous forward current I T ≤ 150 °C 12 12 12 12 12 A F C Surge non-repetitive forward I T = 25 °C, t = 8.3 ms 240 240 240 240 240 A current, Half Sine Wave F,SM C p Operating temperature T -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C j Storage temperature T -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C stg Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions 1N1199A(R) 1N1200A(R) 1N1202A(R) 1N1204A(R) 1N1206A(R) Unit Diode forward voltage V I = 12 A, T = 25 °C 1.1 1.1 1.1 1.1 1.1 V F F j V = 50 V, T = 25 °C 10 10 10 10 10 μA Reverse current I R j R V = 50 V, T = 175 °C 15 15 15 15 15 mA R j Thermal characteristics Thermal resistance, junction - R 2.00 2.00 2.00 2.00 2.00 °C/W case thJC 1 Feb 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
1N1199A thru 1N1206AR 2 Feb 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
1N1199A thru 1N1206AR Package dimensions and terminal configuration Product is marked with part number and terminal configuration. M DO- 4 (DO-203AA) J P D G B N C E F A Inches Millimeters Min Max Min Max A 10-32 UNF B 0.424 0.437 10.77 11.10 C ----- 0.505 ----- 12.82 D ------ 0.800 ----- 20.30 E 0.453 0.492 11.50 12.50 F 0.114 0.140 2.90 3.50 G ----- 0.405 ----- 10.29 J ----- 0.216 ----- 5.50 M ----- φ0.302 ----- φ7.68 N 0.031 0.045 0.80 1.15 P 0.070 0.79 1.80 2.00 3 Feb 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: G eneSiC Semiconductor: 1N1202A 1N1204AR 1N1200AR 1N1206AR 1N1206A 1N1200A 1N1204A 1N1199AR 1N1202AR