X7S Dielectric General Specifications GENERAL DESCRIPTION X7S formulations are called “temperature stable” ceramics and fall into EIA Class II materials. Its temperature variation of capacitance s within ±22% from –55°C to +125°C. This capacitance change is non-linear. Capacitance for X7S varies under the influence of electrical operating conditions such as voltage and frequency. X7S dielectric chip usage covers the broad spectrum of industrial applications where known changes in capacitance due to applied voltages are acceptable. PART NUMBER (SEE PAGE 4 FOR COMPLETE PART NUMBER EXPLANATION) 1206 Z Z 105 M A T 2 A Size Voltage Dielectric Capacitance Capacitance Failure Terminations Packaging Special (L” x W”) 4 = 4V Z = X7S Code (In pF) Tolerance Rate T = Plated Ni 2 = 7” Reel Code 6 = 6.3V 2 Sig. Digits + K = ±10% A = N/A and Sn 4 = 13” Reel A = Std. Z = 10V Number of M = ± 20% Product Y = 16V Zeros 3 = 25V 5 = 50V 1 = 100V 2 = 200V NOTE: Contact factory for availability of Tolerance Options for Specific Part Numbers. TYPICAL ELECTRICAL CHARACTERISTICS X7S Dielectric Typical Temperature Coefficient Capacitance vs. Frequency Insulation Resistance vs Temperature 10 +30 ads)10,000 ar 5 F +20 m- % Cap Change--11-0505 Capacitance +-11000 Resistance (Oh 1,010000 -20 % -20 ation -25 ul -60 -40 -20Te0mp2e0ratu4r0e (°6C0) 80 100120140 -310KHz 10 KHz 100 KHz 1 MHz 10 MHz Ins 00 20 40 60 80 100 120 Frequency Temperature °C Variation of Impedance with Cap Value Impedance vs. Frequency Variation of Impedance with Chip Size Variation of Impedance with Chip Size 1,000 pF vs. 10,000 pF - X7S Impedance vs. Frequency Impedance vs. Frequency 0805 10,000 pF - X7S 100,000 pF - X7S 10 10.00 1,000 pF 10 10280065 10280065 10,000 pF 1210 1210 mpedance, 01..1000 mpedance, 01..10 Impedance, 01..10 I I 0.01 .01 .01 10 100 1000 1 10 100 1,000 1 10 100 1,000 Frequency, MHz Frequency, MHz Frequency, MHz 22 101316

X7S Dielectric Specifications and Test Methods Parameter/Test X7S Specification Limits Measuring Conditions Operating Temperature Range -55ºC to +125ºC Temperature Cycle Chamber Capacitance Within specified tolerance ≤ 5.0% for ≥ 100V DC rating Freq.: 1.0 kHz ± 10% ≤ 5.0% for ≥ 25V DC rating Voltage: 1.0Vrms ± .2V Dissipation Factor ≤ 10.0% for ≥ 10V DC rating For Cap > 10 μF, 0.5Vrms @ 120Hz ≤ 10.0% for ≤ 10V DC rating 100,000MΩ or 1000MΩ - μF, Charge device with rated voltage for Insulation Resistance whichever is less 120 ± 5 secs @ room temp/humidity Charge device with 250% of rated voltage for Dielectric Strength No breakdown or visual defects 1-5 seconds, w/charge and discharge current limited to 50 mA (max) Appearance No defects Deflection: 2mm Capacitance Test Time: 30 seconds ≤ ±12% Resistance to Variation Flexure Dissipation Stresses Factor Meets Initial Values (As Above) Insulation ≥ Initial Value x 0.3 Resistance ≥ 95% of each terminal should be covered Dip device in eutectic solder at 230 ± 5ºC Solderability with fresh solder for 5.0 ± 0.5 seconds Appearance No defects, <25% leaching of either end terminal Capacitance ≤ ±7.5% Variation RSeoslidsetar nHceea tto DisFsaicptaotrion Meets Initial Values (As Above) sDecipo nddesv.ic Set oinre e autt ercotoicm s toelmdepre arat t2u6r0eº fCo rf o2r4 6 ±0 2 hours before measuring electrical properties. Insulation Meets Initial Values (As Above) Resistance Dielectric Meets Initial Values (As Above) Strength Appearance No visual defects Step 1: -55ºC ± 2º 30 ± 3 minutes Capacitance ≤ ±7.5% Step 2: Room Temp ≤ 3 minutes Variation Dissipation Meets Initial Values (As Above) Step 3: +125ºC ± 2º 30 ± 3 minutes Thermal Shock Factor Insulation Meets Initial Values (As Above) Step 4: Room Temp ≤ 3 minutes Resistance Dielectric Repeat for 5 cycles and measure after Meets Initial Values (As Above) Strength 24 ± 2 hours at room temperature Appearance No visual defects Capacitance Variation ≤ ±12.5% Charge device with 1.5 rated voltage (≤ 10V) in test chamber set at 125ºC ± 2ºC Dissipation ≤ Initial Value x 2.0 (See Above) for 1000 hours (+48, -0) Load Life Factor Insulation ≥ Initial Value x 0.3 (See Above) Remove from test chamber and stabilize at room Resistance temperature for 24 ± 2 hours before measuring. Dielectric Meets Initial Values (As Above) Strength Appearance No visual defects Capacitance ≤ ±12.5% Store in a test chamber set at 85ºC ± 2ºC/ 85% ± Variation 5% relative humidity for 1000 hours Load DisFsaicptaotrion ≤ Initial Value x 2.0 (See Above) (+48, -0) with rated voltage applied. Humidity Insulation Remove from chamber and stabilize at room ≥ Initial Value x 0.3 (See Above) Resistance temperature and humidity for 24 ± 2 hours before measuring. Dielectric Meets Initial Values (As Above) Strength 23 101316

X7S Dielectric Capacitance Range PREFERRED SIZES ARE SHADED SIZE 0402 0603 0805 1206 1210 Soldering Reflow/Wave Reflow/Wave Reflow/Wave Reflow/Wave Reflow Only Packaging All Paper All Paper Paper/Embossed Paper/Embossed Paper/Embossed mm 1.00 ± 0.10 1.60 ± 0.15 2.01 ± 0.20 3.20 ± 0.20 3.20 ± 0.20 (L) Length (in.) (0.040 ± 0.004) (0.063 ± 0.006) (0.079 ± 0.008) (0.126 ± 0.008) (0.126 ± 0.008) mm 0.50 ± 0.10 0.81 ± 0.15 1.25 ± 0.20 1.60 ± 0.20 2.50 ± 0.20 W) Width (in.) (0.020 ± 0.004) (0.032 ± 0.006) (0.049 ± 0.008) (0.063 ± 0.008) (0.098 ± 0.008) (t) mm 0.25 ± 0.15 0.35 ± 0.15 0.50 ± 0.25 0.50 ± 0.25 0.50 ± 0.25 Terminal (in.) (0.010 ± 0.006) (0.014 ± 0.006) (0.020 ± 0.010) (0.020 ± 0.010) (0.020 ± 0.010) WVDC 6.3 6.3 4 10 50 100 6.3 Cap 100 (pF) 150 220 330 470 680 1000 1500 2200 3300 4700 6800 Cap 0.010 (μF) 0.015 0.022 0.033 C 0.047 C 0.068 C 0.10 C 0.15 0.22 0.33 G 0.47 G 0.68 G 1.0 G 1.5 N 2.2 N 3.3 N 4.7 N Q Q* 10 22 Z 47 100 WVDC 6.3 6.3 4 10 50 100 6.3 SIZE 0402 0603 0805 1206 1210 Letter A C E G J K M N P Q X Y Z Max. 0.33 0.56 0.71 0.90 0.94 1.02 1.27 1.40 1.52 1.90 2.29 2.54 2.79 Thickness (0.013) (0.022) (0.028) (0.035) (0.037) (0.040) (0.050) (0.055) (0.060) (0.075) (0.090) (0.100) (0.110) PAPER EMBOSSED *Contact Factory for Specifications 24 101316