1N6267A Series (cid:2) 1500 Watt Mosorb Zener Transient Voltage Suppressors Unidirectional* http://onsemi.com Mosorb devices are designed to protect voltage sensitive components from high voltage, high−energy transients. They have Cathode Anode excellent clamping capability, high surge capability, low zener impedance and fast response time. These devices are ON Semiconductor’s exclusive, cost-effective, highly reliable Surmetic(cid:2) axial leaded package and are ideally-suited for use in communication systems, numerical controls, process controls, medical equipment, business machines, power supplies and many AXIAL LEAD other industrial/consumer applications, to protect CMOS, MOS and CASE 41A Bipolar integrated circuits. PLASTIC Features MARKING DIAGRAM • Working Peak Reverse Voltage Range − 5.8 V to 214 V • Peak Power − 1500 Watts @ 1 ms A 1.5KE • ESD Rating of Class 3 (>16 kV) per Human Body Model xxxA 1N6 • Maximum Clamp Voltage @ Peak Pulse Current xxxA YYWW(cid:3) • Low Leakage < 5 (cid:2)A Above 10 V (cid:3) • UL 497B for Isolated Loop Circuit Protection A = Assembly Location • Response Time is Typically < 1 ns 1.5KExxxA = ON Device Code • 1N6xxxA = JEDEC Device Code Pb−Free Packages are Available YY = Year WW = Work Week Mechanical Characteristics = (See Table on Page 3) CASE: Void-free, transfer-molded, thermosetting plastic (cid:3) = Pb−Free Package (Note: Microdot may be in either location) FINISH: All external surfaces are corrosion resistant and leads are readily solderable ORDERING INFORMATION MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES: 230°C, 1/16 in from the case for 10 seconds Device Package Shipping† POLARITY: Cathode indicated by polarity band 1.5KExxxA Axial Lead 500 Units/Box MOUNTING POSITION: Any 1.5KExxxAG Axial Lead 500 Units/Box (Pb−Free) 1.5KExxxARL4 Axial Lead 1500/Tape & Reel 1.5KExxxARL4G Axial Lead 1500/Tape & Reel (Pb−Free) 1N6xxxA Axial Lead 500 Units/Box 1N6xxxAG Axial Lead 500 Units/Box (Pb−Free) 1N6xxxARL4 Axial Lead 1500/Tape & Reel 1N6xxxARL4G Axial Lead 1500/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications *For additional information on our Pb−Free strategy and soldering details, please Brochure, BRD8011/D. download the ON Semiconductor Soldering and Mounting Techniques Preferred devices are recommended choices for future use Reference Manual, SOLDERRM/D. and best overall value. © Semiconductor Components Industries, LLC, 2005 1 Publication Order Number: July, 2005 − Rev. 7 1N6267A/D

1N6267A Series MAXIMUM RATINGS Rating Symbol Value Unit Peak Power Dissipation (Note 1) @ TL ≤ 25°C PPK 1500 W Steady State Power Dissipation PD 5.0 W @ TL ≤ 75°C, Lead Length = 3/8 in Derated above TL = 75°C 20 mW/°C Thermal Resistance, Junction−to−Lead R(cid:3)JL 20 °C/W Forward Surge Current (Note 2) @ TA = 25°C IFSM 200 A Operating and Storage TJ, Tstg −65 to +175 °C Temperature Range Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Nonrepetitive current pulse per Figure 5 and derated above TA = 25°C per Figure 2. 2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum. NOTES: Please see 1.5KE6.8CA to 1.5KE250CA for Bidirectional Devices ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 3.5 V Max., IF (Note 3) = 100 A) I Symbol Parameter IF IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM Working Peak Reverse Voltage IR Maximum Reverse Leakage Current @ VRWM VCVBRVRWM V IR VF VBR Breakdown Voltage @ IT IT IT Test Current (cid:4)VBR Maximum Temperature Coefficient of VBR IF Forward Current IPP VF Forward Voltage @ IF Uni−Directional TVS http://onsemi.com 2

1N6267A Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 3.5 V Max. @ IF (Note 3) = 100 A) Breakdown Voltage VC @ IPP (Note 7) JEDEC VRWM Device† (Note 5) IR @ VRWM VBR (Note 6) (Volts) @ IT VC IPP (cid:2)VBR Device† (Note 4) (Volts) ((cid:2)A) Min Nom Max (mA) (Volts) (A) (%/°C) 1.5KE6.8A, G 1N6267A, G 5.8 1000 6.45 6.8 7.14 10 10.5 143 0.057 1.5KE7.5A, G 1N6268A, G 6.4 500 7.13 7.5 7.88 10 11.3 132 0.061 1.5KE8.2A, G 1N6269A, G 7.02 200 7.79 8.2 8.61 10 12.1 124 0.065 1.5KE9.1A, G 1N6270A, G 7.78 50 8.65 9.1 9.55 1 13.4 112 0.068 1.5KE10A, G 1N6271A, G 8.55 10 9.5 10 10.5 1 14.5 103 0.073 1.5KE11A, G 1N6272A, G 9.4 5 10.5 11 11.6 1 15.6 96 0.075 1.5KE12A, G 1N6273A, G 10.2 5 11.4 12 12.6 1 16.7 90 0.078 1.5KE13A, G 1N6274A, G 11.1 5 12.4 13 13.7 1 18.2 82 0.081 1.5KE15A, G 1N6275A, G 12.8 5 14.3 15 15.8 1 21.2 71 0.084 1.5KE16A, G 1N6276A, G 13.6 5 15.2 16 16.8 1 22.5 67 0.086 1.5KE18A, G 1N6277A, G 15.3 5 17.1 18 18.9 1 25.2 59.5 0.088 1.5KE20A, G 1N6278A, G 17.1 5 19 20 21 1 27.7 54 0.09 1.5KE22A, G 1N6279A, G 18.8 5 20.9 22 23.1 1 30.6 49 0.092 1.5KE24A, G 1N6280A, G 20.5 5 22.8 24 25.2 1 33.2 45 0.094 1.5KE27A, G 1N6281A, G 23.1 5 25.7 27 28.4 1 37.5 40 0.096 1.5KE30A, G 1N6282A, G 25.6 5 28.5 30 31.5 1 41.4 36 0.097 1.5KE33A, G 1N6283A, G 28.2 5 31.4 33 34.7 1 45.7 33 0.098 1.5KE36A, G 1N6284A, G 30.8 5 34.2 36 37.8 1 49.9 30 0.099 1.5KE39A, G 1N6285A, G 33.3 5 37.1 39 41 1 53.9 28 0.1 1.5KE43A, G 1N6286A, G 36.8 5 40.9 43 45.2 1 59.3 25.3 0.101 1.5KE47A, G 1N6287A, G 40.2 5 44.7 47 49.4 1 64.8 23.2 0.101 1.5KE51A, G 1N6288A, G 43.6 5 48.5 51 53.6 1 70.1 21.4 0.102 1.5KE56A, G 1N6289A, G 47.8 5 53.2 56 58.8 1 77 19.5 0.103 1.5KE62A, G 1N6290A, G 53 5 58.9 62 65.1 1 85 17.7 0.104 1.5KE68A, G 1N6291A, G 58.1 5 64.6 68 71.4 1 92 16.3 0.104 1.5KE75A, G 1N6292A, G 64.1 5 71.3 75 78.8 1 103 14.6 0.105 1.5KE82A, G 1N6293A, G 70.1 5 77.9 82 86.1 1 113 13.3 0.105 1.5KE91A, G 1N6294A, G 77.8 5 86.5 91 95.5 1 125 12 0.106 1.5KE100A, G 1N6295A, G 85.5 5 95 100 105 1 137 11 0.106 1.5KE110A, G 1N6296A, G 94 5 105 110 116 1 152 9.9 0.107 1.5KE120A, G 1N6297A, G 102 5 114 120 126 1 165 9.1 0.107 1.5KE130A, G 1N6298A, G 111 5 124 130 137 1 179 8.4 0.107 1.5KE150A, G 1N6299A, G 128 5 143 150 158 1 207 7.2 0.108 1.5KE160A, G 1N6300A, G 136 5 152 160 168 1 219 6.8 0.108 1.5KE170A, G 1N6301A, G 145 5 162 170 179 1 234 6.4 0.108 1.5KE180A, G 1N6302A, G* 154 5 171 180 189 1 246 6.1 0.108 1.5KE200A, G 1N6303A, G 171 5 190 200 210 1 274 5.5 0.108 1.5KE220A, G 185 5 209 220 231 1 328 4.6 0.109 1.5KE250A, G 214 5 237 250 263 1 344 5 0.109 Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value. 3. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum. 4. Indicates JEDEC registered data 5. A transient suppressor is normally selected according to the maximum working peak reverse voltage (VRWM), which should be equal to or greater than the dc or continuous peak operating voltage level. 6. VBR measured at pulse test current IT at an ambient temperature of 25°C 7. Surge current waveform per Figure 5 and derate per Figures 1 and 2. †The “G” suffix indicates Pb−Free package available. *Not Available in the 1500/Tape & Reel http://onsemi.com 3

1N6267A Series 100 NONREPETITIVE C PULSE WAVEFORM F25° SHOWN IN FIGURE 5 % OT= A POWER (kW) 10 DERATING IN CURRENT @ 10800 PEAK ULSE R OR 60 P, PK AK POWE 40 EP PK A 20 E P 1 0 0.1(cid:2)(cid:2)s 1(cid:2)(cid:2)s 10(cid:2)(cid:2)s 100(cid:2)(cid:2)s 1 ms 10 ms 0 25 50 75 100 125 150 175 200 tP, PULSE WIDTH TA, AMBIENT TEMPERATURE (°C) Figure 1. Pulse Rating Curve Figure 2. Pulse Derating Curve 1N6373, ICTE-5, MPTE-5, 1N6267A/1.5KE6.8A through through 1N6389, ICTE-45,C, MPTE-45,C 1N6303A/1.5KE200A 10,000 10,000 MEASURED @ ZERO BIAS MEASURED @ ZERO BIAS 1000 1000 F) F) p p E ( MEASURED @ VRWM E ( C C N N A A MEASURED @ V T T RWM ACI 100 ACI 100 P P A A C C C, C, 10 10 1 10 100 1000 1 10 100 1000 VBR, BREAKDOWN VOLTAGE (VOLTS) VBR, BREAKDOWN VOLTAGE (VOLTS) Figure 3. Capacitance versus Breakdown Voltage S) T T A W PULSE WIDTH (t ) IS DEFINED AS TION ( 3/8″ tr TCHUARTR PEONTIN DT EWCHAPEYRSE T OTH 5E0 %PE OAFK IPP. SSIPA 5 3/8″ %) 100 PEAK VALUE − IPP tr ≤ 10(cid:2)(cid:2)s OWER DI 4 VALUE ( HALF VALUE − IPP E P 3 , PP 50 2 T I A T S 2 Y D t EA 1 P T S , D 0 0 P 0 25 50 75 100 125 150 175 200 0 1 2 3 4 TL, LEAD TEMPERATURE (°C) t, TIME (ms) Figure 4. Steady State Power Derating Figure 5. Pulse Waveform http://onsemi.com 4

1N6267A Series 1N6373, ICTE-5, MPTE-5, 1.5KE6.8CA through through 1N6389, ICTE-45,C, MPTE-45,C 1.5KE200CA 1000 V (cid:2)=(cid:2)6.8 to 13(cid:2)V 1000 V (cid:2)=(cid:2)6.8 to 13(cid:2)V T (cid:2)=(cid:2)25°C BR(NOM) T (cid:2)=(cid:2)25°C BR(NOM) 500 tL(cid:2)=(cid:2)10(cid:2)(cid:2)s 20(cid:2)V 500 tL(cid:2)=(cid:2)10(cid:2)(cid:2)s 20(cid:2)V P 24(cid:2)V 43(cid:2)V P 24(cid:2)V 43(cid:2)V S) 200 S) 200 75(cid:2)V P P AM 100 AM 100 T ( T ( N 50 N 50 E E R R R R CU 20 CU 20 180(cid:2)V ST 10 ST 10 120(cid:2)V E E , T 5 , T 5 T T I I 2 2 1 1 0.3 0.5 0.7 1 2 3 5 7 10 20 30 0.3 0.5 0.7 1 2 3 5 7 10 20 30 (cid:5)V , INSTANTANEOUS INCREASE IN V ABOVE V (VOLTS) (cid:5)V , INSTANTANEOUS INCREASE IN V ABOVE V (VOLTS) BR BR BR(NOM) BR BR BR(NOM) Figure 6. Dynamic Impedance 1 0.7 0.5 0.3 R 0.2 O PULSE WIDTH T C 10 ms FA 0.1 G N 0.07 ATI 0.05 R 1 ms E D 0.03 0.02 100 (cid:2)s 10 (cid:2)s 0.01 0.1 0.2 0.5 1 2 5 10 20 50 100 D, DUTY CYCLE (%) Figure 7. Typical Derating Factor for Duty Cycle APPLICATION NOTES RESPONSE TIME application, since the main purpose for adding a transient In most applications, the transient suppressor device is suppressor is to clamp voltage spikes. These devices have placed in parallel with the equipment or component to be excellent response time, typically in the picosecond range protected. In this situation, there is a time delay associated and negligible inductance. However, external inductive with the capacitance of the device and an overshoot effects could produce unacceptable overshoot. Proper condition associated with the inductance of the device and circuit layout, minimum lead lengths and placing the the inductance of the connection method. The capacitance suppressor device as close as possible to the equipment or effect is of minor importance in the parallel protection components to be protected will minimize this overshoot. scheme because it only produces a time delay in the Some input impedance represented by Zin is essential to transition from the operating voltage to the clamp voltage as prevent overstress of the protection device. This impedance shown in Figure 8. should be as high as possible, without restricting the circuit The inductive effects in the device are due to actual operation. turn-on time (time required for the device to go from zero DUTY CYCLE DERATING current to full current) and lead inductance. This inductive The data of Figure 1 applies for non-repetitive conditions effect produces an overshoot in the voltage across the and at a lead temperature of 25°C. If the duty cycle increases, equipment or component being protected as shown in the peak power must be reduced as indicated by the curves Figure 9. Minimizing this overshoot is very important in the of Figure 7. Average power must be derated as the lead or http://onsemi.com 5

1N6267A Series ambient temperature rises above 25°C. The average power the 10 (cid:2)s pulse. However, when the derating factor for a derating curve normally given on data sheets may be given pulse of Figure 7 is multiplied by the peak power value normalized and used for this purpose. of Figure 1 for the same pulse, the results follow the At first glance the derating curves of Figure 7 appear to be expected trend. in error as the 10 ms pulse has a higher derating factor than TYPICAL PROTECTION CIRCUIT Z in V LOAD V in L V (TRANSIENT) in OVERSHOOT DUE TO V V (TRANSIENT) V INDUCTIVE EFFECTS in V L V L V in t d t = TIME DELAY DUE TO CAPACITIVE EFFECT D t t Figure 8. Figure 9. UL RECOGNITION* The entire series has Underwriters Laboratory Conditioning, Temperature test, Dielectric Voltage- Recognition for the classification of protectors (QVGV2) Withstand test, Discharge test and several more. under the UL standard for safety 497B and File #116110. Whereas, some competitors have only passed a Many competitors only have one or two devices recognized flammability test for the package material, we have been or have recognition in a non-protective category. Some recognized for much more to be included in their Protector competitors have no recognition at all. With the UL497B category. recognition, our parts successfully passed several tests including Strike Voltage Breakdown test, Endurance *Applies to 1.5KE6.8A, CA thru 1.5KE250A, CA CLIPPER BIDIRECTIONAL DEVICES 1. Clipper-bidirectional devices are available in the 3. The 1N6267A through 1N6303A series are JEDEC 1.5KEXXA series and are designated with a “CA” registered devices and the registration does not include suffix; for example, 1.5KE18CA. Contact your nearest a “CA” suffix. To order clipper-bidirectional devices ON Semiconductor representative. one must add CA to the 1.5KE device title. 2. Clipper-bidirectional part numbers are tested in both directions to electrical parameters in preceding table (except for V which does not apply). F http://onsemi.com 6

1N6267A Series OUTLINE DIMENSIONS MOSORB CASE 41A−04 ISSUE D B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI D Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. LEAD FINISH AND DIAMETER UNCONTROLLED IN DIMENSION P. 4. 041A−01 THRU 041A−03 OBSOLETE, NEW STANDARD 041A−04. K P INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.335 0.374 8.50 9.50 P B 0.189 0.209 4.80 5.30 A D 0.038 0.042 0.96 1.06 K 1.000 −−− 25.40 −−− P −−− 0.050 −−− 1.27 K http://onsemi.com 7

1N6267A Series Mosorb and Surmetic are trademarks of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: http://onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Order Literature: http://www.onsemi.com/litorder Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 For additional information, please contact your Email: orderlit@onsemi.com Phone: 81−3−5773−3850 local Sales Representative. http://onsemi.com 1N6267A/D 8

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: O N Semiconductor: 1.5KE100ARL4 1.5KE100ARL4G 1.5KE10A 1.5KE10AG 1.5KE10ARL4 1.5KE110ARL4 1.5KE110ARL4G 1.5KE11A 1.5KE11AG 1.5KE11ARL4 1.5KE120ARL4 1.5KE120ARL4G 1.5KE12A 1.5KE12AG 1.5KE12ARL4 1.5KE130A 1.5KE130AG 1.5KE130ARL4 1.5KE130ARL4G 1.5KE13ARL4 1.5KE150A 1.5KE150AG 1.5KE150ARL4 1.5KE150ARL4G 1.5KE15A 1.5KE15ARL4 1.5KE160ARL4 1.5KE160ARL4G 1.5KE16A 1.5KE16ARL4 1.5KE170ARL4 1.5KE170ARL4G 1.5KE180A 1.5KE180AG 1.5KE180ARL4 1.5KE180ARL4G 1.5KE18A 1.5KE18ARL4 1.5KE200A 1.5KE200AG 1.5KE200ARL4 1.5KE200ARL4G 1.5KE20A 1.5KE20ARL4 1.5KE220ARL4 1.5KE220ARL4G 1.5KE22A 1.5KE22AG 1.5KE22ARL4 1.5KE22ARL4G 1.5KE24A 1.5KE24AG 1.5KE24ARL4 1.5KE250A 1.5KE250AG 1.5KE250ARL4 1.5KE250ARL4G 1.5KE27A 1.5KE27ARL4 1.5KE30A 1.5KE30ARL4 1.5KE33A 1.5KE33ARL4 1.5KE36A 1.5KE36ARL4 1.5KE39ARL4 1.5KE43A 1.5KE43ARL4 1.5KE47A 1.5KE47ARL4 1.5KE51ARL4 1.5KE56A 1.5KE56AG 1.5KE56ARL4 1.5KE6.8A 1.5KE6.8ARL4 1.5KE62A 1.5KE62ARL4 1.5KE68A 1.5KE68ARL4 1.5KE7.5A 1.5KE7.5AG 1.5KE75A 1.5KE75AG 1.5KE75ARL4 1.5KE8.2A 1.5KE8.2AG 1.5KE8.2ARL4 1.5KE8.2ARL4G 1.5KE82A 1.5KE82AG 1.5KE82ARL4 1.5KE9.1A 1.5KE9.1AG 1.5KE9.1ARL4 1.5KE91ARL4