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ICGOO电子元器件商城为您提供1.5KE11CA-E3/54由Vishay设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 1.5KE11CA-E3/54价格参考¥1.85-¥4.56。Vishay1.5KE11CA-E3/54封装/规格:TVS - 二极管, 。您可以下载1.5KE11CA-E3/54参考资料、Datasheet数据手册功能说明书,资料中有1.5KE11CA-E3/54 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

电路保护

描述

TVS DIODE 9.4VWM 15.6VC 1.5KETVS 二极管 - 瞬态电压抑制器 1500W 11V Bidirect

产品分类

TVS - 二极管

品牌

Vishay Semiconductor Diodes DivisionVishay Semiconductors

产品手册

点击此处下载产品Datasheet

产品图片

rohs

RoHS 合规性豁免无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

二极管与整流器,TVS二极管,TVS 二极管 - 瞬态电压抑制器,Vishay Semiconductors 1.5KE11CA-E3/54TransZorb®

数据手册

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产品型号

1.5KE11CA-E3/541.5KE11CA-E3/54

不同频率时的电容

-

产品目录绘图

产品种类

TVS 二极管 - 瞬态电压抑制器

供应商器件封装

1.5KE

其它名称

1.5KE11CA-E3/54GIDKR

击穿电压

10.5 V to 11.6 V

功率-峰值脉冲

1500W (1.5kW)

包装

Digi-Reel®

单向通道

-

双向通道

1

商标

Vishay Semiconductors

商标名

TransZorb

安装类型

通孔

安装风格

Through Hole

封装

Reel

封装/外壳

DO-201AA,DO-27,轴向

封装/箱体

DO-201AA

尺寸

5.3 mm Dia. x 9.5 mm L

峰值浪涌电流

96.2 A

峰值脉冲功率耗散

1.5 kW

工作温度

-55°C ~ 175°C (TJ)

工作电压

9.4 V

工厂包装数量

1400

应用

通用

最大工作温度

+ 175 C

最小工作温度

- 55 C

极性

Bidirectional

标准包装

1

电压-击穿(最小值)

10.5V

电压-反向关态(典型值)

9.4V

电压-箝位(最大值)@Ipp

15.6V

电流-峰值脉冲(10/1000µs)

96.2A

电源线路保护

端接类型

Axial

类型

齐纳

系列

1.5KE

钳位电压

15.6 V

零件号别名

1.5KE11CA-E3/73

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PDF Datasheet 数据手册内容提取

1.5KE6.8A thru 1.5KE540A, 1N6267A thru 1N6303A www.vishay.com Vishay General Semiconductor TRANSZORB® Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in unidirectional and bidirectional • 1500 W peak pulse power capability with a 10/1000 μs waveform, repetitive rate (duty cycle) : 0.01 % • Excellent clamping capability • Very fast response time • Low incremental surge resistance Case Style 1.5KE • AEC-Q101 qualified available • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of complianc e please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS Use in sensitive electronics protection against voltage V unidirectional 6.8 V to 540 V BR transients induced by inductive load switching and lightin g V bidirectional 6.8 V to 220 V BR on ICs, MOSFET, signal lines of sensor units for consumer, V unidirectional 5.8 V to 459 V WM computer, industrial, automotive, and telecommunication. V bidirectional 5.8 V to 185 V WM P 1500 W MECHANICAL DATA PPM PD 6.5 W Case: molded epoxy body over passivated junction IFSM (unidirectional only) 200 A Molding compound meets UL 94 V-0 flammability ratin g T max. 175 °C Base P/N-E3 - RoHS compliant, commercial grade J Polarity Unidirectional, bidirectional Base P/NHE3_X - RoHS compliant, and AEC-Q101 qualifie d (“X” denotes revision code e.g. A, B, ...) Package 1.5KE Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 DEVICES FOR BIDIRECTION APPLICATIONS E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix For bidirectional types, use CA suffix (e.g. 1.5KE220CA) meets JESD 201 class 2 whisker test Electrical characteristics apply in both directions. Note • 1.5KE250A to 1.5KE540A are commercial grade only • Bidirectional is available from 1.5KE6.8CA to 1.5KE220CA only Polarity: for unidirectional types the color band denotes cathode end, no marking on bidirectional types MAXIMUM RATINGS (T = 25 °C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT Peak pulse power dissipation with a 10/1000 μs waveform (1) (fig. 1) P 1500 W PPM Peak pulse current with a 10/1000 μs waveform (1) I See next table A PPM Power dissipation on infinite heatsink at T = 75 °C (fig. 5) P 6.5 W L D Peak forward surge current 8.3 ms single half sine-wave unidirectional only (2) I 200 A FSM Maximum instantaneous forward voltage at 100 A for unidirectional only (3) V 3.5/5.0 V F Operating junction and storage temperature range T , T -55 to +175 °C J STG Notes (1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2 A (2) Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum (3) V = 3.5 V for 1.5KE220A and below; V = 5.0 V for 1.5KE250A and above F F Revision: 21-Sep-2020 1 Document Number: 88301 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1.5KE6.8A thru 1.5KE540A, 1N6267A thru 1N6303A www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted) A BREAKDOWN MAXIMUM MAXIMUM MAXIMUM MAXIMUM VOLTAGE TEST STAND-OFF REVERSE PEAK JEDEC® GENERAL CLAMPING TEMPERATURE V AT I (1) CURRENT VOLTAGE LEAKAGE PULSE TYPE SEMICONDUCTOR BR T VOLTAGE COEFFICIENT (V) I V AT V CURRENT NUMBER PART NUMBER T WM WM AT I OF V (mA) (V) I (4) I (2) PPM BR MIN. MAX. (DμA) PP(AM) VC (V) (%/°C) 1N6267A (+)1.5KE6.8A 6.45 7.14 10 5.80 1000 143 10.5 0.057 1N6268A (+)1.5KE7.5A 7.13 7.88 10 6.40 500 133 11.3 0.061 1N6269A (+)1.5KE8.2A 7.79 8.61 10 7.02 200 124 12.1 0.065 1N6270A (+)1.5KE9.1A 8.65 9.55 1.0 7.78 50 112 13.4 0.068 1N6271A (+)1.5KE10A 9.50 10.5 1.0 8.55 10 103 14.5 0.073 1N6272A (+)1.5KE11A 10.5 11.6 1.0 9.40 5.0 96.2 15.6 0.075 1N6273A (+)1.5KE12A 11.4 12.6 1.0 10.2 5.0 89.8 16.7 0.078 1N6274A (+)1.5KE13A 12.4 13.7 1.0 11.1 5.0 82.4 18.2 0.081 1N6275A (+)1.5KE15A 14.3 15.8 1.0 12.8 1.0 70.8 21.2 0.084 1N6276A (+)1.5KE16A 15.2 16.8 1.0 13.6 1.0 66.7 22.5 0.086 1N6277A (+)1.5KE18A 17.1 18.9 1.0 15.3 1.0 59.5 25.2 0.089 1N6278A (+)1.5KE20A 19.0 21.0 1.0 17.1 1.0 54.2 27.7 0.090 1N6279A (+)1.5KE22A 20.9 23.1 1.0 18.8 1.0 49.0 30.6 0.092 1N6280A (+)1.5KE24A 22.8 25.2 1.0 20.5 1.0 45.2 33.2 0.094 1N6281A (+)1.5KE27A 25.7 28.4 1.0 23.1 1.0 40.0 37.5 0.096 1N6282A (+)1.5KE30A 28.5 31.5 1.0 25.6 1.0 36.2 41.4 0.097 1N6283A (+)1.5KE33A 31.4 34.7 1.0 28.2 1.0 32.8 45.7 0.098 1N6284A (+)1.5KE36A 34.2 37.8 1.0 30.8 1.0 30.1 49.9 0.099 1N6285A (+)1.5KE39A 37.1 41.0 1.0 33.3 1.0 27.8 53.9 0.100 1N6286A (+)1.5KE43A 40.9 45.2 1.0 36.8 1.0 25.3 59.3 0.101 1N6287A (+)1.5KE47A 44.7 49.4 1.0 40.2 1.0 23.1 64.8 0.101 1N6288A (+)1.5KE51A 48.5 53.6 1.0 43.6 1.0 21.4 70.1 0.102 1N6289A (+)1.5KE56A 53.2 58.8 1.0 47.8 1.0 19.5 77.0 0.103 1N6290A (+)1.5KE62A 58.9 65.1 1.0 53.0 1.0 17.6 85.0 0.104 1N6291A (+)1.5KE68A 64.6 71.4 1.0 58.1 1.0 16.3 92.0 0.104 1N6292A (+)1.5KE75A 71.3 78.8 1.0 64.1 1.0 14.6 104 0.105 1N6293A (+)1.5KE82A 77.9 86.1 1.0 70.1 1.0 13.3 113 0.105 1N6294A (+)1.5KE91A 86.5 95.5 1.0 77.8 1.0 12.0 125 0.106 1N6295A (+)1.5KE100A 95.0 105 1.0 85.5 1.0 10.9 137 0.106 1N6296A (+)1.5KE110A 105 116 1.0 94.0 1.0 9.9 152 0.107 1N6297A (+)1.5KE120A 114 126 1.0 102 1.0 9.1 165 0.107 1N6298A (+)1.5KE130A 124 137 1.0 111 1.0 8.4 179 0.107 1N6299A (+)1.5KE150A 143 158 1.0 128 1.0 7.2 207 0.106 1N6300A (+)1.5KE160A 152 168 1.0 136 1.0 6.8 219 0.108 1N6301A (+)1.5KE170A 162 179 1.0 145 1.0 6.4 234 0.108 1N6302A (+)1.5KE180A 171 189 1.0 154 1.0 6.1 246 0.108 1N6303A (+)1.5KE200A 190 210 1.0 171 1.0 5.5 274 0.108 - (+)1.5KE220A 209 231 1.0 185 1.0 4.6 328 0.108 - 1.5KE250A 237 263 1.0 214 1.0 4.4 344 0.110 - 1.5KE300A 285 315 1.0 256 1.0 3.6 414 0.110 - 1.5KE350A 333 368 1.0 300 1.0 3.1 482 0.110 - 1.5KE400A 380 420 1.0 342 1.0 2.7 548 0.110 - 1.5KE440A 418 462 1.0 376 1.0 2.5 602 0.110 - 1.5KE480A 456 504 1.0 408 1.0 2.28 658 0.110 - 1.5KE510A 485 535 1.0 434 1.0 2.15 698 0.110 - 1.5KE540A 513 567 1.0 459 1.0 2.03 740 0.110 Notes (1) Pulse test: tp  50 ms (2) Surge current waveform per fig. 3 and derate per fig. 2 (3) All terms and symbols are consistent with ANSI/IEEE CA62.35 (4) For bidirectional types with V 10 V and less the I limit is doubled R D (+) Underwriters laboratory recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number E136766 for both unidirectional and bidirectional devices Revision: 21-Sep-2020 2 Document Number: 88301 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1.5KE6.8A thru 1.5KE540A, 1N6267A thru 1N6303A www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT Typical thermal resistance, junction to ambient R 75 JA °C/ W Typical thermal resistance, junction to lead R 15.4 JL ORDERING INFORMATION (Example) PREFERRED PIN UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 1.5KE6.8A-E3/54 0.968 54 1400 13" diameter paper tape and reel 1.5KE6.8AHE3_A/C (1)(2) 0.968 C 1400 13" diameter paper tape and reel Notes (1) AEC-Q101 qualified (2) Applied for 1.5KE6.8AHE3_A to 1.5KE220AHE3_A, and 1.5KE6.8CAHE3_A to 1.5KE220CAHE3_A RATINGS AND CHARACTERISTICS CURVES (T = 25 °C unless otherwise noted) A 100 150 T = 25 °C J W) RSM tr = 10 µs Pisu dlseefi nWeidd tahs ( tthd)e Point ower (k 10 ent, % I 100 PIPePaMkValue wdehcearyes t htoe 5P0e a%k oCfu IrPrPeMnt ak Pulse P Pulse Curr HIPaPlMf Value - IP2P P- Pe PPM 1 - Peak PM 50 1a0s/1d0e0fi0neµds bWyaRv.eEfo.Arm. P I t d 0.1 0 0.1 µs 1.0 µs 10 µs 100 µs 1.0 ms 10 ms 0 1.0 2.0 3.0 4.0 td - Pulse Width (s) t - Time (ms) Fig. 1 - Peak Pulse Power Rating Curve Fig. 3 - Pulse Waveform 100 10 000 )PP Uni-Directional nt (I Bi-Directional e% Currge, 75 )Fp VR = 0 Pulse Power (P) or PPDerating in Percenta 5205 ( ecnaticapaC - CJ1100000 TJ =VS 2Rta5 =n ° dCR-Oatfef dVoltage k f = 1.0 MHz Pea Vsig = 50 mVp-p 0 10 0 25 50 75 100 125 150 175 200 5 10 100 500 TJ - Initial Temperature (°C) VBR - Breakdown Voltage (V) Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature Fig. 4 - Typical Junction Capacitance Revision: 21-Sep-2020 3 Document Number: 88301 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1.5KE6.8A thru 1.5KE540A, 1N6267A thru 1N6303A www.vishay.com Vishay General Semiconductor 8.0 100 e Waveform: )W( n 76..00 ng Voltag 20 1Δ0V/C1 0=0 V0Cµ -s VImBRpulse 1.51K.E5K20E0130 1.5KE75 o pi 10 ita 5.0 m p a is Cl 1.5KE39 siD 4.0 al 2.0 rewoP - PD 32..00 LL e=a d0 .L3e7n5g" t(h9s.5 mm) - IncrementC 10..02 111...555KKKEEE693..381 1.0 V Δ 0 0.1 0 25 50 75 100 125 150 175 200 0.5 1 2 10 50 TL - Lead Temperature (°C) IPP - Peak Pulse Current (A) Fig. 5 - Power Derating Curve Fig. 8 - Incremental Clamping Voltage Curve (Unidirectional) 200 100 ent (A) 100 8T.J3 = m TsJ Smianxg.le Half Sine-Wave g Voltage 20 8(cid:3)W/V2aC0v e=µf soV rCImm -:p VuBlsRe 1.5KE200C Curr mpin 10 Surge al Cla 11.5.5KKEE7359CC ward ment 12..00 11..55KKEE1350CC eak For - IncreC 1.5KE171.C5C P V 0.2 (cid:3) 10 0.1 1 10 100 0.5 1 2 10 20 50 Number of Cycles at 60 Hz IPP - Peak Pulse Current (A) Fig. 6 - Maximum Non-Repetitive Forward Surge Current Fig. 9 - Incremental Clamping Voltage Curve (Bidirectional) Unidirectional only 100 100 age W8/2a0veµfsorImm:pulse 1.5KE200 age W10a/1ve0f0o0rmµs: Impulse Volt ΔVC = VC - VBR 1.5KE130 Volt 20 (cid:3)VC = VC - VBR 1.5KE200C mping 1200 1.15.K5EK1E0705 mping 10 1.5KE751C.5KE39C a a Cl Cl 1.5KE30C ntal 2.0 1.5KE39 ntal 2 1.5KE15C eme 1.0 11..55KKEE63.38 eme 1 1.5KE11C - IncrC 111...555KKKEEE911.281 - IncrC 1.5KE7.5C V 0.2 V 0.2 Δ (cid:3) 0.1 0.1 0.5 1 2 10 20 50 0.5 1 2.0 10 20 50 I - Peak Pulse Current (A) I - Peak Pulse Current (A) PP PP Fig. 7 - Incremental Clamping Voltage Curve (Unidirectional) Fig. 10 - Incremental Clamping Voltage Curve (Bidirectional) Revision: 21-Sep-2020 4 Document Number: 88301 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1.5KE6.8A thru 1.5KE540A, 1N6267A thru 1N6303A www.vishay.com Vishay General Semiconductor 100 100 A) )W d Current ( 10 /C°( ecnad 10 ar ep w m For I la s m eou 1 T = 25 °C reh 1 n J T Instanta P1 u%ls eD uWtyid Cthy c=l e300 µs tneisnarT 0.1 0.1 0 0.4 0.8 1.2 1.6 2.0 0.001 0.01 0.1 1 10 100 1000 Instantaneous Forward Voltage (V) t - Pulse Duration (s) p Fig. 11 - Instantaneous Forward Voltage Characteristics Curve Fig. 12 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Case Style 1.5KE 1.0 (25.4) MIN. 0.210 (5.3) 0.190 (4.8) DIA. 0.375 (9.5) 0.285 (7.2) 1.0 (25.4) MIN. 0.042 (1.07) 0.038 (0.96) DIA. APPLICATION NOTES • This series of Silicon Transient Suppressors is used in • This Transient Voltage Suppressor diode has a puls e applications where large voltage transients can power rating of 1500 W for 1 ms. The response time o f permanently damage voltage-sensitive components. TVS diode clamping action is effectively instantaneou s • The TVS diode can be used in applications where (1 x 10-9 s bi-directional); therefore, they can protect induced lightning on rural or remote transmission integrated circuits, MOS devices, hybrids, and othe r lines presents a hazard to electronic circuitr y voltage sensitive semiconductors and components. TV S (ref: R.E.A. specification P.E. 60). diodes can also be used in series or parallel to increase the peak power ratings. Revision: 21-Sep-2020 5 Document Number: 88301 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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